Here - CICC

Technical Sessions
Tuesday, September 16
Session 8 – Amplifiers and Filters
Tuesday, 9/16, 9:00am
Oak Ballroom
Session Chair: Eric Naviasky, Cadence
Session Co-chair: Ken Suyama, Epoch Microelectronics
This session has 3 papers on advances in Class D amplifier design for high performance
audio applications. There will also be two papers on high frequency amplifiers for baseband application, a new technique for increasing stage gain in advanced low voltage
processes, and a high performance programmable active filter.
A 85-225MHz Chebyshev-II Active-RC BPF with Programmable BW and CF
Achieving Over 30dBm IIP3 in 40nm CMOS, B. Wu, Y. Chiu, University of Texas at
A zero-capacitance-spread 8th-order Chebyshev-II active-RC BPF that enables
integrator frequency compensation is reported. With op-amps employing split-path feedforward compensation, significant power savings is achieved in a 40nm CMOS prototype
that measures a center frequency of 85-225MHz and programmable bandwidth-to-center
frequency ratios of 5%-40% with a peak in-band IIP3 of 31dBm.
A High Gain Operational Amplifier via an Efficient Conductance Cancellation
Technique, Bin Huang*† and Degang Chen*, *Iowa State University, †Maxim Integrated
An efficient conductance cancellation method is introduced to achieve high gain
operational amplifiers.The measurement results show that the proposed technique
maintains at least 26.4dB DC gain enhancement under output voltage swing between
0.1V and 1.4V, while power consumption and area overhead are respectively less than
2% and 3%.
High Linearity PVT Tolerant 100MS/s Rail-to-Rail ADC Driver With Built-in Sampler
in 65nm CMOS, Rakesh Kumar Palani, Ramesh Harjani, University of Minnesota,
A novel completely inverter-based ADC driver is proposed that relaxes the gain and unity
gain bandwidth requirements of the negative feedback loop by making it not see the
closed loop gain. This ADC driver has a built-in first order anti alias filter and uses a
passive amplifier to provide a rail-to-rail (2Vpp diff) sampled output signal. This design
exploits the linearity of current mirrors and achieves 65dB of linearity at the Nyquist rate
for a rail-to-rail output. A semi-constant current biasing circuit for inverters has been
proposed to minimizing PVT variations in lower technologies. As a proof of concept an
ADC driver is designed and implemented in TSMC's 65nm GP CMOS technology. The
measured design operates at 100MS/s and has an OIP3 of 40dBm at the Nyquist rate,
provides a gain of 8, and samples the signal onto a 1pF output capacitance while drawing
2mA from a 1V supply.
A 1.2V 110-MHz-UGB Differential Class-AB Amplifier in 65nm CMOS, Akshay
Visweswaran,John R. Long, R. Bogdan Staszewski, Delft University of Technology
A wideband, fully differential, 3-stage class-AB amplifier capable of operation at rates
beyond 100 Mbps is described. Common-mode feedback is applied to increase output
drive capability and reduce bias-dependent crossover distortion when operating in classAB from a low supply voltage. Drawing 3.9mA from a nominal VDD of 1.2V in 65nm
CMOS, the 0.052mm2 amplifier delivers 1.6V swing across a 50Ω load with THD+N of
82.6dB in the unity-gain configuration.
A Stereo 110 dB Multi-rate Audio ΔΣ DAC with Class-G Headphone Driver, Min Gyu
Kim, Dongtian Lu, Todd Brooks, Young Ju Kim, Vinay Chandrasekhar, Dale Stubbs,
Steven Maughan, Bartomeu Servera Mas, David Yu, Broadcom Corporation
A multi-rate, multibit ΔΣ audio DAC is proposed to overcome THD+N limitations due to
out-of-band noise, clock jitter, and DAC latch error. The DAC, combined with a Class-G
headphone driver and pop/click noise suppression, achieves 110 dB dynamic range and
4.03 mW/channel. Measured pop-and-click noise is 155 µV.
An Open-Loop Class-D Audio Amplifier with Increased Low-Distortion Output
Power and PVT-Insensitive EMI Reduction, S.-H. Chien, L.-T. Wu*, S.-Y. Chen*, R.-D.
Jan*, M-Y Shih*, C.-T. Lin*, T.-H. Kuo, National Cheng Kung University, *NeoEnergy
Microelectronics, Inc.
This work implements a class-D audio amplifier with the proposed adaptive-coefficient
delta-sigma modulator (ACDSM) and low-EMI control method. The ACDSM
simultaneously achieves a wide stable input range and high in-band noise suppression,
resulting in a 20% increase of low-distortion output power. Moreover, the low-EMI control
method eases the PVT-sensitive issues.
A 105dBA SNR, 0.0031% THD+N Filter-less Class-D Amplifier with Discrete Time
Feedback Control in 55nm CMOS, M. Kinyua, R. Wang, E. Soenen, TSMC Technology
It is traditionally difficult to implement higher order PWM closed loop class-D amplifiers
using analog techniques. This paper describes a mixed signal approach, implementing a
4th order amplifier in 55nm CMOS. It achieves 105dBA SNR, 0.0031% THD+N, 92dB
PSRR and 85% efficiency when supplying 1W.
Session 9 – Implantable Systems
Tuesday, 9/16, 9:00am
Fir Ballroom
Session Chair: Christophe Antoine, Analog Devices
Session Co-chair: Emmanuel Quevy, Silicon Laboratories
This session is focused on implantable biomedical systems as they hold strong promises
for continuous monitoring, as well as diagnostic and treatment of defective body or brain
Circuit Techniques for Miniaturized Biomedical Sensors (Invited), I. Lee, Y. Kim, S.
Bang, G. Kim, Y.-P. Chen, D. Jeon, S. Jeong, W. Jung, M. Ghaed, Z. Foo, Y. Lee, D.
Sylvester, D. Blaauw*, H. Ha, J.-Y. Sim**, *University of Michigan, **Pohang University
of Science and Technology
Miniaturized biomedical sensors promise improved quality of medical diagnosis and
treatment. However, the realization of such implantable devices faces challenges due to
limited battery capacity and energy sources. This paper describes new circuit techniques
for miniaturized biomedical sensors, with particular focus on bio-signals sensing front
end, power management, and communication.
A mm-Sized Implantable Device with Ultrasonic Energy Transfer and RF Data
Uplink for High-Power Applications, J. Charthad, M. J. Weber, T. C. Chang, M. Saadat,
A. Arbabian, Stanford University
We present a first proof-of-concept mm-sized implant based on ultrasonic power transfer
and RF data uplink for high power applications. The implant supports a DC load power of
100 µW. It also transmits consecutive UWB pulses activated by an ultrasonic downlink,
demonstrating sufficient power for a PPM transmitter in uplink.
A Multiple-Output Fixed Current Stimulation ASIC for Peripherally-Implantable
Neurostimulation System, E. Lee, E. Matei, V. Giang, J. Shi, A. Zadeh, Alfred Mann
A multiple-output stimulation ASIC for a peripherally-implantable neurostimulation system
was implemented in a 0.18µm CMOS process. The numbers of anodic outputs (NEA)
and cathodic outputs (NEC) can be set between 1 and 8 with a fixed total output current
up to 32.6mA, independent of NEA and NEC. Fast turn on technique was proposed for
the stimulator design to achieve a settling time of <5.8µs. The ASIC includes a power
management unit and an electrode monitoring circuit, which consists of a 10-b ADC for
monitoring the high voltage (>15V) stimulator outputs.
Session 10– Wireline Transceivers
Tuesday, 9/16, 9:00am
Pine Ballroom
Session Chair: Azita Emami, Caltech
Session Co-chair: Kimo Tam, Analog Devices
This session presents various wireline transceivers including powerline communication,
short reach links and Ethernet
A 8.125-15.625 Gb/s SerDes Using a Sub-Sampling Ring-Oscillator Phase-Locked
Loop, Socrates D. Vamvakos, Charles Boecker, Eric Groen , Alvin Wang, Shaishav
Desai, Scott Irwin, Vithal Rao, Aldo Bottelli, Jawji Chen, Xiaole Chen, Prashant
Choudhary, Kuo-Chiang Hsieh, Paul Jennings, Haidang Lin, Dan Pechiu, Chethan Rao,
Jason Yeung, MoSys Inc.
The paper describes a 8.125-15.625Gbps SerDes, which employs a sub-sampling ringoscillator PLL to obtain large frequency range with low-jitter. The transmitter uses a
modified hybrid output driver and a multi-step duty-cycle corrector. The receiver uses
BER-based calibration to optimize receiver voltage margin. The transmitter achieves
160fs RMS jitter at 15.625Gbps.
Wideband Flexible-Reach Techniques for a 0.5-16.3Gb/s Fully-Adaptive
Transceiver in 20nm CMOS, Jafar Savoj, Hesam Aslanzadeh, Declan Carey*, Marc
Erett*, Wayne Fang, Yohan Frans, Kenny Hsieh, Jay Im, Anup Jose, Didem Turker,
Parag Upadhyaya, Daniel Wu, Ken Chang, Xilinx, Inc., San Jose, CA, *Xilinx Ireland,
This paper describes the design techniques to achieve wideband flexible-reach operation
in a fully-adaptive transceiver embedded in a 20nm CMOS FPGA. The receiver utilizes a
bandwidth adjustable CTLE for programmable operation over both short-reach and longreach channels. A modified 11-tap, 1-bit speculative DFE topology provides reliable
operation across all data rates. The LC PLL feedback divider uses a synchronized CMOS
down-counter without a prescaler to achieve a continuous divide ratio of 16-257. The
transceiver achieves BER < 10^-15 over a 28dB loss backplane at 16.3Gb/s and over
legacy channels with 10G-KR characteristics at 10.3125Gb/s. The transceiver meets jitter
tolerance specifications for both PCIe Gen3 at 8Gb/s and PCIe Gen4 at 16Gb/s in both
common-clock and spread-spectrum modes.
Design Considerations for Low-Power Analog Front Ends in Full-Duplex 10GBASET Transceivers (Invited), J.R. Westra, J. Mulder, Y. Ke, D. Vecchi, X. Liu, E. Arslan, J.
Wan, Q. Zhang, S. Wang, F. van der Goes, K. Bult, Broadcom Netherlands
The speed of Ethernet over copper cables has steadily increased by a factor of 10,000
over the last four decades, from 1Mb/s in the earliest Ethernet implementations to
10Gb/s in recent systems. This paper describes the design considerations on all levels
of the 10GBASE-T design hierarchy that form the basis for the implementation of highly
power-efficient AFEs in full-duplex 10GBASE-T transceivers. It also shows how these
considerations are implemented in a practical design. At frequencies up to 400MHz, the
transceiver presented in this paper achieves >62dBc transmitter SFDR, >62dBc echo
cancellation (EC) SFDR and >60dB receiver SFDR. Achieving a bit-error-rate (BER)
better than 10−15, it dissipates less than 1.75W at full 10Gb/s traffic over a 100m cable,
which is the lowest power for a 10GBASE-T AFE published to date.
A HomePlugAV SoC in 40nm CMOS Technology (Invited), K. Findlater, A. Bofill, X.
Reves, J. Abad, Broadcom
A cost-optimized 40nm CMOS integrated powerline communications SoC is presented.
This SoC includes all the analog and digital components required for the HomePlugAV
standard. Circuit techniques for the RXPGA and TX line driver are described. The
powerline SoC can achieve full HPAV 200Mbps PHY rate and operates with a 96dB
channel dynamic range with low external component cost.
A 1.4-pJ/b, Power-Scalable 16x12-Gb/s Source-Synchronous I/O with DFE Receiver
in 32nm SOI CMOS Technology, Timothy O. Dickson, Yong Liu, Sergey V. Rylov, Ankur
Agrawal, Seongwon Kim, Ping-Hsuan Hsieh*, John F. Bulzacchelli, Mark Ferriss,
Herschel Ainspan, Alexander Rylyakov, Benjamin D. Parker, Christian Baks, Lei Shan,
Young Kwark, Jose Tierno**, Daniel J. Friedman, IBM T.J. Watson Research Center,
*now with National Tsing Hua University, **now with Apple
A power-scalable 16x12-Gb/s I/O is reported in 32nm SOI CMOS. The I/O includes
adjustable driver amplitude, RX equalization, and deskew modes, enabling support for a
wide range of channels with varying power efficiency. Test chip measurements
demonstrate 1.4-pJ/b efficiency over 0.75” Megtron-6 PCB traces, and 1.9-pJ/b efficiency
over 20” traces.
Session 11– Embedded Tutorial: Test and Manufacturability for Silicon Photonics
and 3D Integration
Tuesday, 9/16, 9:00am
Cedar Ballroom
Session Chair: Manoj Sachdev, University of Waterloo
Session Co-chair: Tetsuya Iizuka, University of Tokyo
Test and manufacturability challenges in Si-photonics and 3D integration are addressed.
The first two papers explain Si-photonics for high-speed and high-performance
interconnects. The last paper introduces 3D integration using inductive-coupling
Hybrid Silicon Photonics Technology Platform for High Performance Optical
Interconnect, Peter De Dobbelaere, Luxtera Inc.
We will cover the various aspects of our silicon photonics technology platforms, including:
wafer processing, photonic device library, design environment and automated test. Our
approaches for electronic circuit and light source integration will be addressed. Finally,
we will highlight some applications and potential roadmaps for further enhancement of
our technology platform.
Photonic Integration in data communications, Odile Liboiron-Ladouceur, McGill
In this tutorial, advancements in silicon photonic integrated circuits will be presented.
Through integration, the transceivers can now reside in close proximity to CMOS circuits
leading to enhanced off-chip throughput and increased bandwidth density. The
integration of several photonic functions such as, modulation, detection, and interconnect,
onto a single chip also provides new means to integrate optical switching in modern
computing systems. Recent development in the field of Silicon Photonics and different
experimental demonstrations will be discussed.
3D Integration by Inductive Coupling, Tadahiro Kuroda, Keio University
In this tutorial, inductive-coupling ThruChip Interface (TCI) will be presented. TCI is a
digital CMOS circuit solution in a standard CMOS technology. It is cheaper than TSV but
bears comparison in performance. Reliability will be covered as well as circuits and
applications. Test and manufacturability will be discussed for heterogeneous integration
by multiple makers. Cost performance will be studied in the case of DRAM/SoC interface
at 44GB/s. Scaling scenario and future direction will be described.
Forum 1 - Emerging Device/Material Technologies
Tuesday, September 16, 9:00 am
Silicon Valley Room
Session 12– Biosystems at Gigahertz
Tuesday, 9/16, 11:00am
Fir Ballroom
Session Chair: Ed Lee, Alfred Mann Foundation
Session Co-chair: Mourad El Gamal, McGill University and Debbie Senesky, Stanford University
This session showcases the designs and applications of Gigahertz circuits in biosystems, both in sensing interfaces and in wireless transmission.
A 0.18-um CMOS Fully Integrated 0.7-6 GHz PLL-Based Complex Dielectric
Spectroscopy System, Osama Elhadidy, Sherif Shakib, Keith Krenek, Samuel Palermo,
and Kamran Entesari, Texas A&M University
A fully-integrated sensing system utilizes a ring oscillator-based phase locked loop (PLL)
for wideband complex dielectric spectroscopy of materials under test (MUT).
Characterization of both real and imaginary MUT permittivity is achievedwith frequencyshift measurements between a sensing oscillator, with a frequency that varies with MUTinduced changes in capacitance and conductance of a delay-cell load, and an amplitudelocked loop (ALL)-controlled MUT-insensitive reference oscillator. Fabricated in 0.18-µm
CMOS, the 0.7-6 GHz spectroscopy system occupies 6.25 mm2 area and achieves 3.7%
maximum permittivity error.
Matching the power density and potentials of biological systems: a 3.1-nW, 130mV, 0.023-mm3 pulsed 33-GHz radio transmitter in 32-nm SOI CMOS, J. B. Choi, E.
Aklimi, J. Roseman, D. Tsai, H. Krishnaswamy, K. L. Shepard, Columbia University
A 3.1nJ/bit pulsed millimeter-wave transmitter 300µm-by-300µm-by-250-µm in size
operates on 130mV-voltage and 3.1nW-power, comparable to those present across
cellular membranes. A link budget analysis dictates an optimal frequency of 33GHz for
ultra-low-power communication. A 1-Hz signal is obtained by supply-switching an on-chip
millimeter-wave LC-oscillator with a duty cycle of 1e-6.
A 239-281GHz Sub-THz Imager with 100MHz Resolution by CMOS Directconversion Receiver with On-chip Circular-polarized SIW Antenna, Yang Shang,
Hao Yu, Chang Yang, Yuan Liang, Wei Meng Lim, Nanyang Technological University
A 239-281GHz imager by direct-conversion receiver is demonstrated in CMOS 65nm
process with high spectrum resolution and high sensitivity for frequency-dependent subTHz biomedical imaging. The proposed direct-conversion receiver is measured with -2dBi
conversion gain over 42GHz bandwidth, -54.4dBm sensitivity with 100MHz detection
resolution bandwidth, 6.6mW power consumption and 0.99mm2 chip area.
Luncheon Keynote
Tuesday, 9/16, 12:20pm – 1:50 pm
Sierra Ballroom
Tickets for the luncheon are for sale at the Registration Desk
The Troubled Birth of Electrical Engineering: Lessons Learned from the First
Transatlantic Telegraph Cable
Tom Lee, Stanford University
Electrical engineers are the children of a failure so vast and traumatic that we
scarcely even talk about it. The first transatlantic telegraph cable was mainly
designed by a medical doctor, with results one would expect on that basis. A British board of
inquiry convened to assess the multiple failures noted that the electrical arts lacked even a basic
vocabulary to describe the failure. William Thomson was named the new head of the project, and
success followed in 1866. The volt, ohm and ampere were defined shortly thereafter and the
profession of electrical engineering was born. Thomson, of course, became Lord Kelvin, and was
arguably the first professional electrical engineer. This talk describes the heroic efforts required to
span the 3,000km distance without any amplifiers of any kind.
Session 13 – Data Converter Techniques
Tuesday, 9/16, 2:00pm
Oak Ballroom
Session Chair: Jorge Grilo, Maxlinear
Session Co-chair: Xicheng Jiang, Broadcom
This session presents seven papers covering advanced data converter techniques, from
continuous-time delta-sigma modulators to VCO-based and SAR converters
Advances in High-Speed Continuous-Time Delta-Sigma Modulators (Invited), T.
Caldwell, D. Alldred, R. Schreier, H. Shibata, Y. Dong, Analog Devices
The maximum clock rate of continuous-time delta-sigma modulators has increased
dramatically over the past several years, showing that continuous-time systems can
operate at higher rates than their discrete-time counterparts. This paper outlines the
circuits and architectures that have led to these improvements, and presents an analysis
of the maximum clock rate of continuous-time delta-sigma modulators when limited by
the metastability error of the internal flash ADC. A circuit simulation technique is also
presented that helps analyse high-speed continuous-time systems to identify and correct
non-idealities in the modulator’s transfer functions.
A 11µW 250 Hz BW Two-Step Incremental ADC with 100 dB DR and 91 dB SNDR for
Integrated Sensor Interfaces, Chia-Hung Chen, Yi Zhang*, Tao He*, Patrick Y.
Chiang**, Gabor C. Temes*, Mediatek USA, *Oregon State University
A two-step incremental ADC (IADC) is proposed for low-bandwidth, micro-power sensor
interface circuits. This architecture extends the order of a conventional IADC from N to
(2N-1) by using a two-step operation, while requiring only the circuitry of an Nth-order
IADC. The implemented third-order IADC achieves a measured dynamic range of 99.8
dB and an SNDR of 91 dB for a maximum input 2.2 VPP and 250 Hz bandwidth.
Fabricated in 65 nm CMOS, the IADC’s core area is 0.2 mm2, and consumes only 10.7
µW. The FoMs are 0.76 pJ/conversion-step and 173.5 dB, both among the best reported
An All Digital PWM-Based Delta Sigma ADC with an Inherently Matched Multi-Bit
Quantizer/DAC, Wooyoung Jung, Yousof Mortazavi, Brian L. Evans, Arjang Hassibi, The
University of Texas at Austin
A PWM-based 1st order 3-bit continuous-time ∆Σ ADC that performs the Σ, ∆, multi-bit
quantization and DAC operations all is time domain using all digital circuits without
switching to current or voltage domains. The system has a 52 dB dynamic range without
calibration while consuming 2.7 mW of power using a 1.8V supply. The system occupies
0.027 mm2 area in a 0.18μm digital CMOS process.
A VCO-based Current-to-Digital Converter for Sensor Applications, P.Prabha,
S.Kim*, K. Reddy, S. Rao, N. Griesert**, A. Rao**, G. Winter**, and P. Hanumolu*,
Oregon State University, *University of Illinois, Urbana-Champaign, **Texas Instruments
A current sensing VCO-based ADC is realized using a passive integrator, VCO quantizer,
and digital circuits. A power efficient digital IIR filter is used to tackle VCO non-linearity in
a scaling friendly manner. Designed for ambient light sensing, prototype achieves 900pA
accuracy over an input current range of 4uA.
Lookup-Table-Based Background Linearization for VCO-Based ADCs, J. McNeill, R.
Majidi, J. Gong, C. Liu*, Worcester Polytechnic Institute, *M/A-COM Technology
A lookup-table digital correction technique using the “Split ADC” approach enables
linearization of VCO-based ADCs. A 10b prototype in 180nm CMOS shows ENOB
improved to 9.41b from an uncorrected 3.5b. The background LMS calibration tolerates
different input signals and corrects linearity over the entire input signal excursion.
A 1.2 V 2.64 GS/s 8bit 39 mW Skew-Tolerant Time-interleaved SAR ADC in 40 nm
Digital LP CMOS for 60 GHz WLAN, S. Kundu, J. H. Lu*, E. Alpman, H. Lakdawala**,
J. Paramesh***, B. Jung*, S. Zur, E. Gordon, Intel Corp, *Purdue University, **Qualcomm
Inc, ***Carnegie Mellon University
A clock-skew tolerant 8-bit 16x time-interleaved (TI) SAR ADC is presented that meets
WiGig standard requirements with only background offset and gain calibrations. By using
a timing-calibration-free global bottom-plate sampling scheme, the ADC achieves
2.64GS/s >6 ENOB in the entire Nyquist band. The 40nm LP CMOS design dissipates
39mW from 1.2V. The TI-SAR ADC characterized with an integrated receiver front-end
achieves -21.44dB EVM at sensitivity with an OFDM/ QAM16 signal.
A 160 MS/s, 11.1 mW, Single-Channel Pipelined SAR ADC with 68.3 dB SNDR., V.
Tripathi, B. Murmann, Stanford University
A low-power, 160 MS/s, single-channel pipelined SAR ADC that employs two capacitive
DACs to decouple the high-speed SAR operation from the low-noise residue generation
is presented. Measured results show a peak SNDR of 68.3 dB with a Schreier FOM of
167dB. The converter core occupies 0.09 in 65-nm CMOS.
Session 14 – Testability and Reliability Enhancement Techniques
Tuesday, 9/16, 2:00pm
Fir Ballroom
Session Chair: Mike Li, Altera
Session Co-chair: Gordon Roberts, McGill University
This session starts with DFT techniques for All-Digital PLLs. The second paper proposes
a low-leakage ESD clamp. Final two papers address measurement techniques for
Plasma-Induced Damage and flicker noise, respectively.
Design for Test of a mm-Wave ADPLL-Based Transmitter (Invited), Wanghua Wu1,2,
R. Bogdan Staszewski2, John R. Long2, 1Marvell Semiconductor Inc.and 2Delft University
of Technology
This paper focuses on design-for-test (DFT) techniques applied to an ADPLL transmitter
targeting mm-wave frequencies. System snapshotting via on-chip SRAM helps to identify
the root cause of the design deficiencies accurately. Low-cost build-in self test (BIST) of
an ADPLL performance enhances test coverage, and reduces test time and production
A Low-Leakage, Hybrid ESD Power Supply Clamp in 65nm CMOS Technology, M.
Elghazali, M. Sachdev and A. Opal, Dept. of Electrical and Computer Engineering,
University of Waterloo
In this work, a 65nm hybrid clamp that has static and transient clamps is presented. A
NMOS based ESD clamp with level converter delay is used as a transient clamp, while
diodes are used as a static clamp. Simulation and measurement results show the
proposed clamp has excellent ESD characteristics.
A Test Circuit Based on a Ring Oscillator Array for Statistical Characterization of
Plasma-Induced Damage, W. H. Choi, S. Satapathy, J. Keane*, C. H. Kim, University of
Minnesota, *Intel Corporation
We propose a test circuit for characterizing Plasma-Induced Damage (PID) based on a
ring oscillator array for collecting high-quality BTI statistics. The proposed circuit enables
accurate PID-induced BTI lifetime prediction with high frequency measurement precision
(>0.01%) in a short measurement time (>1μs). Measured frequency statistics from a
65nm test chip shows a clear shift in the average frequency as a result of PID.
Impact of Random Telegraph Noise on CMOS Logic Circuit Reliability (Invited), T.
Matsumoto, K. Kobayashi*, H. Onodera, Kyoto University, *Kyoto Institute of Technology
Recent researches on RTN and its impact on circuits are briefly summarized. Then the
impact of RTN on CMOS logic circuit reliability is described based on our results from
65~nm and 40~nm test chips. The impact of RTN can be a serious problem even for logic
Session 15 – Challenges for Analog Nanoscale Technology
Tuesday, 9/16, 2:00pm
Pine Ballroom
Session Chair: Ramnath Venkatraman, LSI Corporation
Session Co-chair: Richard Guo, TSMC
This session focuses on unique power performance for scaled technology. Analog circuitdesign-manufacturing co-optimization for mobile SoCs, innovative 3IC wafer-levelsystem-integration and reliability are highlighted.
TCAD Structure Synthesis and Capacitance Extraction of a Voltage-controlled
Oscillator using Automated Layout-to-device Synthesis Methodology, Debajit
Bhattacharya, Rajiv V. Joshi*, Herschel A. Ainspan*, Ninad D. Sathaye**, Mohit Bajaj**,
Suresh Gundapaneni**, Niraj K. Jha, Princeton University, *IBM Research, **IBM SRDC
We present a TCAD structure-synthesis and capacitance-extraction methodology in a
22nm CMOS process and report parasitic capacitances of a 10-GHz VCO. We observe
that front-end capacitances are dominant and quantify them along with their back-end
counterparts using a novel layer-wise capacitance analysis. The estimated frequency
tuning range agrees with that of a VCO hardware.
The Challenges of Analog Circuits on Nanoscale Technologies (Invited), G. Taylor,
Intel Corporation
As SOCs integrate larger systems, the number and variety of analog/mixed signal circuits
are growing. For reasons of cost, performance, and power die are being scaled to more
advanced processes which do not deliver power or performance benefits for analog
circuits. How are we going to bridge the gap?
Technology-Design-Manufacturing Co-optimization for Advanced Mobile SoCs
(Invited), Geoffrey Yeap, Qualcomm Technologies Inc.
How to maintain the Moore’s Law scaling beyond the 193 immersion resolution limit is
the key question semiconductor industry needs to answer in the near future. Process
complexity will undoubtfully increase for 14nm node and beyond, which brings both
challenges and opportunities for technology development. A vertically integrated
technology-design-manufacturing co-optimization flow is desired to better address the
complicated issues new process changes bring. In recent years smart mobile wireless
devices have been the fastest growing consumer electronics market. Advanced mobile
devices such as smartphones are complex systems with the overriding objective of
providing the best user-experience value by harnessing all the technology innovations.
Most critical system drivers are better system performance/power efficiency, cost
effectiveness, and smaller form factors, which, in turns, drive the need of system design
and solution with More-than-Moore innovations. Mobile system-on-chips (SoCs) has
become the leading driver for semiconductor technology definition and manufacturing.
Here we highlight how the co-optimization strategy influenced architecture, device/circuit,
process technology and package, in the face of growing process cost/complexity and
variability as well as design rule restrictions.
New System-in-Package (SiP) Integration Technologies (Invited), Doug C.H. Yu,
R&D, Taiwan Semiconductor Manufacturing Company
New System-in-Package (SiP) with innovative Wafer-Level-System-Integration (WLSI)
technologies that leverage foundry core competence on wafer processes have been
demonstrated. The WLSI technologies include Chip-on-Wafer-on-Substrate (CoWoSTM)
3DIC and interposer, Integrated Fan-Out (InFO) and Chip-Scale Wafer-Level-Packaging.
Wide application portfolio from very low I/O pin-count, low-cost devices, to medium, high
and ultra-high pin-count are realized. Chip-partition followed by flexible powerful
integration of single-chip or multi-chips, advanced or matured Si, logic and memory, SoC
and sensor/MEMS. System values include low profile, low power, high bandwidth along
with competitive cost can be readily achieved. With the chip-partition, we can sustain
Moore’s law longer.
Reliability modeling of HK MG Technologies (Invited), T. Nigam, A. Kerber,
It has been demonstrated that the introduction of HfO2 gate stacks into CMOS
technologies provides the means to continue with traditional device gate length scaling.
However, the introduction of HfO2 as a new gate dielectric into the gate stack of FETs
brings about new challenges for understanding reliability physics and qualification. This
review summarizes recent advances in the modeling of charge trapping and defect
generation in HfO2 gate stacks. This paper relates the electrical properties to the
chemical/physical properties of the high- die le ctric a nd dis cus s e s im plica tion for
technology scaling.
Forum 2 - Wearable Electronics and Computing
Tuesday, September 16, 2:00 pm
Silicon Valley Room